IXTH7P50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH7P50
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 130 nC
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO247
IXTH7P50 Datasheet (PDF)
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Otros transistores... IXTH67N10MA , IXTH67N10MB , IXTH68N20 , IXTH6N80 , IXTH6N80A , IXTH6N90 , IXTH6N90A , IXTH75N10 , P60NF06 , IXTH8P50 , IXTK21N100 , IXTK33N45 , IXTK33N50 , IXTK74N20 , IXTM10N100 , IXTM10N90 , IXTM11N80 .
Liste
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