SML100L16 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML100L16
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13 nS
Cossⓘ - Capacitancia de salida: 595 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-264AA
Búsqueda de reemplazo de SML100L16 MOSFET
- Selecciónⓘ de transistores por parámetros
SML100L16 datasheet
..1. Size:19K semelab
sml100l16.pdf 
SML100L16 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 1000V 1 2 3 2.29 (0.090) ID(cont) 21A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.500 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0
8.1. Size:20K semelab
sml100c4.pdf
SML100C4 TO 254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 VDSS 1000V ID(cont) 3.6A RDS(on) 4.00 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC BSC Faster Switching Pin 1 Drain Pin 2
8.2. Size:105K semelab
sml100m12msf.pdf
NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200 C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless othe
8.3. Size:20K semelab
sml100s13.pdf
SML100S13 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS
8.4. Size:18K semelab
sml1001rhn sml901rhn sml901r1hn.pdf
SML1001RHN SML901RHN0 TO 258 Package Outline. 4TH GENERATION MOSFET Dimensions in mm (Inches) 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) N CHANNEL 0.88 (0.035) ENHANCEMENT MODE 4.19 (0.165) HIGH VOLTAGE 3.94 (0.155) Dia. 1 2 3 POWER MOSFETS D 5.08 (0.200) 3.56 (0.140) G BSC BSC 1.65 (0.065) 1.39 (0.055) S Typ. Pin 1 Drain Pin 2 Sourc
8.5. Size:21K semelab
sml100b13 sml100b13f.pdf
SML100B13 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 1000V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.860 2.
8.6. Size:21K semelab
sml100b11 sml100b11f.pdf
SML100B11 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 1000V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 11A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 1.000 2.
8.7. Size:60K semelab
sml1001r sml901r sml901r1an sml901r3an.pdf
SML1001R1AN 1000V 9.5A 1.10 SML901R1AN 900V 9.5A 1.10 SEME SML1001R3AN 1000V 8.5A 1.30 SML901R3AN 900V 8.5A 1.30 LAB TO3 Package Outline. Dimensions in mm (Inches) POWER MOS IV N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25 C unless otherwise stated) SML Parameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit 900 1000 900 1000 V VDSS Drain S
8.8. Size:20K semelab
sml100s11.pdf
SML100S11 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS
8.9. Size:23K semelab
sml100j22.pdf
SML100J22 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
8.10. Size:23K semelab
sml100j19 sml100j19f.pdf
SML100J19 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
8.12. Size:23K semelab
sml100j34.pdf
SML100J34 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
8.13. Size:26K semelab
sml100h11.pdf
SML100H11 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 1000V ID(cont) 11A RDS(on) 0.880 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower
8.14. Size:18K semelab
sml1004r2gxn.pdf
SML1004R2GXN SEME LAB 4TH GENERATION MOSFET TO 257 Package Outline. Dimensions in mm (inches) 4.83 (0.190) N CHANNEL 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) ENHANCEMENT MODE 1.14 (0.045) HIGH VOLTAGE 3.56 (0.140) Dia. 3.81 (0.150) ISOLATED POWER MOSFETS 1 2 3 VDSS 1000V ID(cont) 3.0A RDS(on) 4.20 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120
8.15. Size:19K semelab
sml100t21.pdf
SML100T21 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 1000V 1 2 3 2.87 (0.113) ID(cont) 21A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.500 1.01 (0.040) 1.40 (0.0
8.16. Size:26K semelab
sml100w18.pdf
SML100W18 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 1000V ID(cont) 17.3A RDS(on) 0.570 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G incre
8.17. Size:22K semelab
sml100h9.pdf
SML100H9 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 1000V ID(cont) 9A RDS(on) 1.100 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le
Otros transistores... SMC8810A, SMC9926, SML0505FN, SML1004R2GXN, SML100B11F, SML100B13F, SML100H9, SML100J19F, 50N06, SML100M12MSF, SML10B75F, SML1248NC2A, SML1248PC2A, SML1310IG, SML1310IGF, SML2005SMD1, SML20B56F
