SML40H19 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML40H19
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 510 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO-258
Búsqueda de reemplazo de SML40H19 MOSFET
- Selecciónⓘ de transistores por parámetros
SML40H19 datasheet
..1. Size:22K semelab
sml40h19.pdf 
SML40H22 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 400V ID(cont) 22A RDS(on) 0.180 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le
8.1. Size:19K semelab
sml40h28.pdf
SML40H28 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 400V ID(cont) 28A RDS(on) 0.140 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le
8.2. Size:26K semelab
sml40h22.pdf
SML40H22 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 400V ID(cont) 22A RDS(on) 0.180 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le
9.1. Size:21K semelab
sml40b37.pdf
SML40B37 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 400V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 37A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.120 2.21
9.2. Size:23K semelab
sml40j53.pdf
SML40J53 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V
9.3. Size:21K semelab
sml40b27.pdf
SML40B27 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 400V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 27A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.160 2.21
9.4. Size:10K semelab
sml4003.pdf
SML4003 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 600V dia. IC = 4A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)
9.5. Size:21K semelab
sml40b28.pdf
SML40B28 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 400V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 28A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.140 2.21
9.6. Size:20K semelab
sml40l57.pdf
SML40L57 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 400V 1 2 3 2.29 (0.090) ID(cont) 57A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.070 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051)
9.8. Size:20K semelab
sml40a26.pdf
SML40A26 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 400V 1 2 ID(cont) 25.5A 3 (case) RDS(on) 0.150 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1
9.9. Size:23K semelab
sml40j93.pdf
SML40J93 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V
9.10. Size:11K semelab
sml4017a.pdf
SML4017A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 200V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed i
9.11. Size:11K semelab
sml4017.pdf
SML4017 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 200V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
Otros transistores... SML30L76F, SML3520AN, SML3520BN, SML3520HN, SML3525AN, SML3525BN, SML3525HN, SML4020AN, AO3401, SML50A23, SML50C15, SML50J10RU2, SML50J44F, SML50L47F, SML6609ASMD05, SML8028JVR, SML8030LVR
