SML50C15 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML50C15
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V
Qgⓘ - Carga de la puerta: 110 nC
trⓘ - Tiempo
de subida: 11 nS
Cossⓘ - Capacitancia de salida: 360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Encapsulados: TO-254
Búsqueda de reemplazo de SML50C15 MOSFET
- Selecciónⓘ de transistores por parámetros
SML50C15 datasheet
..1. Size:20K semelab
sml50c15.pdf 
SML50C15 TO 254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 500V 1 2 3 ID(cont) 15A RDS(on) 0.270 0.89 (0.035) Faster Switching 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC Lower Leakage BSC
9.1. Size:20K semelab
sml50a19.pdf
SML50A19 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 500V 1 2 ID(cont) 18.5A 3 (case) RDS(on) 0.240 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1
9.2. Size:21K semelab
sml50b26.pdf
SML50B26 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 26A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.200 2.21
9.3. Size:601K semelab
sml50hb06.pdf
SML50HB06 Attributes -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 V Vce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 A rent Total PowerDissipation Tc=25C Ptot 280 W Gate-emitte
9.4. Size:26K semelab
sml50h19.pdf
SML50H19 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 500V ID(cont) 18.5A RDS(on) 0.260 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower
9.5. Size:167K semelab
sml50b26f.pdf
SML50B26F TO 247AD Package Outline. Dimensions in mm (inches) N CHANNEL 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) ENHANCEMENT MODE 2.49 (0.098) HIGH VOLTAGE POWER FREDFET 3.55 (0.140) 3.81 (0.150) VDSS 500V 1 2 3 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 26A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) RDS(on) 0.200 1.40 (0.
9.6. Size:20K semelab
sml50s30.pdf
SML50S30 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDSS
9.7. Size:162K semelab
sml50b30.pdf
SML50B30 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 30A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.170 2.21
9.9. Size:30K semelab
sml5020bn.pdf
SML5020BN SEME LAB 4TH GENERATION MOSFET TO247 AD Package Outline. Dimensions in mm (inches) N CHANNEL 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) ID(cont) 28.0A 1.01 (0
9.10. Size:20K semelab
sml50a15.pdf
SML50A15 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 500V 1 2 ID(cont) 14.7A 3 (case) RDS(on) 0.300 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1
9.11. Size:138K semelab
sml50j44f.pdf
SML50J44F SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) N CHANNEL 31.5 (1.240) 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 ENHANCEMENT MODE 4.3 (0.169 ) (4 places) 4.8 (0.187) H = 4.9 (0.193) HIGH VOLTAGE 1 2 (4 places) R POWER FREDFET 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
9.12. Size:26K semelab
sml50w40.pdf
SML50W40 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 500V ID(cont) 40A RDS(on) 0.120 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increases
9.13. Size:23K semelab
sml50j44.pdf
SML50J44 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V
9.14. Size:26K semelab
sml50h24.pdf
SML50H24 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 500V ID(cont) 24A RDS(on) 0.190 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le
9.15. Size:20K semelab
sml50l37.pdf
SML50L37 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 500V 1 2 3 2.29 (0.090) ID(cont) 37A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.140 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051)
9.16. Size:20K semelab
sml50s26.pdf
SML50S26 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDSS
9.17. Size:23K semelab
sml50j50.pdf
SML50J50 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V
9.18. Size:21K semelab
sml50b20.pdf
SML50B20 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 20A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.280 2.21
9.19. Size:20K semelab
sml50l47.pdf
SML50L47 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 500V 1 2 3 2.29 (0.090) ID(cont) 47A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.100 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051)
9.20. Size:21K semelab
sml50b22.pdf
SML50B22 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 22A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.240 2.21
9.21. Size:29K semelab
sml50j10ru2.pdf
SML50J10RU2 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
9.23. Size:24K semelab
sml50l47f.pdf
SML50L47 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 500V 1 2 3 2.29 (0.090) ID(cont) 44A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.100 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051)
9.24. Size:19K semelab
sml50t47.pdf
SML50T47 T247clipPackage Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 500V 1 2 3 2.87 (0.113) ID(cont) 47A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.100 1.01 (0.040) 1.40 (0.055)
Otros transistores... SML3520BN, SML3520HN, SML3525AN, SML3525BN, SML3525HN, SML4020AN, SML40H19, SML50A23, IRFP260, SML50J10RU2, SML50J44F, SML50L47F, SML6609ASMD05, SML8028JVR, SML8030LVR, SML8056BVR, SML8065BVR
