SML9030-T254 Todos los transistores

 

SML9030-T254 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML9030-T254
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-254
 

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SML9030-T254 Datasheet (PDF)

 ..1. Size:20K  semelab
 sml9030-t254 sml9030.pdf pdf_icon

SML9030-T254

SML9030T254MECHANICAL DATAPCHANNELDimensions in mm (inches)MOS13.59 (0.535) 6.32 (0.249)13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040) TRANSISTORDia.3.78 (0.149) 1.27 (0.050)VDSS 50VID(cont) 18ARDS(on) 0.141 2 3FEATURES P CHANNEL REPETITIVE AVALANCHE RATED DYNAMIC dv/dt RATING0.89 (0.035)1.14 (0.045)3.81 (0.150) FAST SWITCHI

 6.1. Size:19K  semelab
 sml9030-220m.pdf pdf_icon

SML9030-T254

SML9030220MMECHANICAL DATADimensions in mm (inches)PCHANNELMOS4.705.0010.41TRANSISTOR0.7010.670.903.56Dia.VDSS 50V3.81ID(cont) 13.2ARDS(on) 0.151 2 3FEATURES P CHANNEL REPETITIVE AVALANCHE RATED0.89 DYNAMIC dv/dt RATING1.142.54 2.65 FAST SWITCHINGBSC 2.75 EASE OF PARALLELINGTO220 Metal Package SIMPLE DR

 6.2. Size:20K  semelab
 sml9030-220 sml9030-220m-iso sml9030-220m.pdf pdf_icon

SML9030-T254

SML9030220MMECHANICAL DATADimensions in mm (inches)PCHANNELMOS4.705.0010.41TRANSISTOR0.7010.670.903.56Dia.VDSS 50V3.81ID(cont) 13.2ARDS(on) 0.151 2 3FEATURES P CHANNEL REPETITIVE AVALANCHE RATED0.89 DYNAMIC dv/dt RATING1.142.54 2.65 FAST SWITCHINGBSC 2.75 EASE OF PARALLELINGTO220 Metal Package SIMPLE DR

 9.1. Size:18K  semelab
 sml1001rhn sml901rhn sml901r1hn.pdf pdf_icon

SML9030-T254

SML1001RHNSML901RHN0TO258 Package Outline.4TH GENERATION MOSFETDimensions in mm (Inches)6.86 (0.270)6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)NCHANNEL0.88 (0.035)ENHANCEMENT MODE4.19 (0.165) HIGH VOLTAGE3.94 (0.155)Dia.1 2 3POWER MOSFETSD5.08 (0.200) 3.56 (0.140)GBSC BSC1.65 (0.065)1.39 (0.055)STyp.Pin 1 Drain Pin 2 Sourc

MOSTRAR MÁS

Otros transistores... SML80L27F , SML901R1AN , SML901R1HN , SML901R3AN , SML902R4BN , SML902RBN , SML9030-220M , SML9030-220M-ISO , STF13NM60N , SMM2348ES , SMMA511DJ , SMMB912DK , SMMBFJ310LT1G , SMMBFJ310LT3G , SMOS21N50 , SMOS26N50 , SMOS44N50 .

History: NCE3N170PF | R8008ANX | NCEP1212AS | IRFR9120N | JFPC18N60C | SRT06N027HT | WMS17P03TS

 

 
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