HAF1003S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HAF1003S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.1 V
   trⓘ - Tiempo de subida: 44500 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: LDPAK

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HAF1003S Datasheet (PDF)

..1. Size:56K hitachi
haf1003l haf1003s.pdf

HAF1003(L), HAF1003(S)Silicon P Channel MOS FET Series Power SwitchingADE-208-626B (Z)3rd. EditionJuly 2000This FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temperature lik

8.1. Size:200K renesas
haf1002l haf1002s.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:75K hitachi
haf1004l haf1004s.pdf

HAF1004(L), HAF1004(S)Silicon P Channel MOS FET SeriesPower SwitchingADE-208-629B (Z)3rd. EditionMay 2002DescriptionThis FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temp

8.3. Size:1643K cn vbsemi
haf1004s.pdf

HAF1004Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

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