HAF2011S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAF2011S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66000 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: LDPAK

 Búsqueda de reemplazo de HAF2011S MOSFET

- Selecciónⓘ de transistores por parámetros

 

HAF2011S datasheet

 ..1. Size:129K  renesas
 haf2011l haf2011s.pdf pdf_icon

HAF2011S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:229K  renesas
 haf2012l haf2012s.pdf pdf_icon

HAF2011S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:106K  renesas
 haf2007l haf2007s.pdf pdf_icon

HAF2011S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:1501K  cn vbsemi
 haf2007-90s.pdf pdf_icon

HAF2011S

HAF2007-90S www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo

MOSTRAR MÁS

Otros transistores... HAF1002S, HAF1003L, HAF1003S, HAF1004L, HAF1004S, HAF2007L, HAF2007S, HAF2011L, IRLB4132, HAF2012L, HAF2012S, HAT1038RJ, HAT2028RJ, HAT2033RJ, HAT2038RJ, HAT2114RJ, HAT2126RP