HFD5N70S Todos los transistores

 

HFD5N70S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFD5N70S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 91 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.2 Ohm
   Paquete / Cubierta: D-PAK
 

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HFD5N70S Datasheet (PDF)

 ..1. Size:169K  semihow
hfd5n70s.pdf pdf_icon

HFD5N70S

Jan 2013BVDSS = 700 VRDS(on) typ HFD5N70S / HFU5N70SID = 3.8 A700V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N70S HFU5N70S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

 7.1. Size:209K  semihow
hfd5n70u.pdf pdf_icon

HFD5N70S

Jan 2014BVDSS = 700 VRDS(on) typ = 2.7 HFD5N70U / HFU5N70U ID = 3.6 A700V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N70U HFU5N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

 9.1. Size:199K  semihow
hfd5n40.pdf pdf_icon

HFD5N70S

July 2005BVDSS = 400 VRDS(on) typ HFD5N40 / HFU5N40ID = 3.4 A400V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N40 HFU5N40 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ

 9.2. Size:205K  semihow
hfd5n60s.pdf pdf_icon

HFD5N70S

Sep 2009BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

Otros transistores... HFD4N50 , HFD5N40 , HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U , HFD5N65S , HFD5N65U , NCEP15T14 , HFD5N70U , HFD630 , HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U , HFD8N65U , HFD8N70U .

History: APT6045BVFRG | SVS11N65SD2 | NCE65N800F | SWP17N80K | RFP12P10 | 8N60KG-TF2-T | HAT2174H

 

 
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