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HFP2N60U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP2N60U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-220
 

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HFP2N60U Datasheet (PDF)

 ..1. Size:192K  semihow
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HFP2N60U

Nov 2013BVDSS = 600 VRDS(on) typ = HFP2N60U ID = 2 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

 7.1. Size:210K  shantou-huashan
hfp2n60.pdf pdf_icon

HFP2N60U

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

 7.2. Size:391K  semihow
hfp2n60f hfs2n60f.pdf pdf_icon

HFP2N60U

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 7.3. Size:170K  semihow
hfp2n60s.pdf pdf_icon

HFP2N60U

March 2014BVDSS = 600 VRDS(on) typ HFP2N60SID = 2.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area L

Otros transistores... HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , HFP13N60U , HFP13N65U , HFP18N50U , HFP2N60S , IRF3710 , HFP2N65S , HFP2N65U , HFP2N70S , HFP2N90 , HFP3N80 , HFP4N50 , HFP4N90 , HFP5N50S .

History: HFD6N60U | SSM3K04FS | EFC2J004NUZ | AFC5606 | NCE70T1K2K | BSO150N03MDG | APT50M50JLL

 

 
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