HFP2N65U Todos los transistores

 

HFP2N65U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP2N65U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 54 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 5.5 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 38 pF

Resistencia drenaje-fuente RDS(on): 6.5 Ohm

Empaquetado / Estuche: TO-220

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HFP2N65U Datasheet (PDF)

1.1. hfp2n65u.pdf Size:191K _update_mosfet

HFP2N65U
HFP2N65U

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFP2N65U ID = 2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

3.1. hfp2n65s.pdf Size:191K _update_mosfet

HFP2N65U
HFP2N65U

Sep 2009 BVDSS = 650 V RDS(on) typ HFP2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 4.1. hfp2n60s.pdf Size:170K _update_mosfet

HFP2N65U
HFP2N65U

March 2014 BVDSS = 600 V RDS(on) typ HFP2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area L

4.2. hfp2n60u.pdf Size:192K _update_mosfet

HFP2N65U
HFP2N65U

Nov 2013 BVDSS = 600 V RDS(on) typ = HFP2N60U ID = 2 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

 4.3. hfp2n60.pdf Size:210K _shantou-huashan

HFP2N65U
HFP2N65U

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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