HFP5N70S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HFP5N70S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 10.5 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.2 Ohm
   Paquete / Cubierta: TO-220

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HFP5N70S Datasheet (PDF)

..1. Size:174K semihow
hfp5n70s.pdf

Aug 2012BVDSS = 700 VRDS(on) typ = 2.7 HFP5N70SID = 4.0 A700V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Low

9.1. Size:660K shantou-huashan
hfp5n80.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

9.2. Size:204K semihow
hfp5n65u.pdf

March 2013BVDSS = 650 VRDS(on) typ HFP5N65U ID = 4.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

9.3. Size:408K semihow
hfp5n60f hfs5n60f.pdf

Oct 2016HFP5N60F / HFS5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFP5N60F HFS5N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unle

9.4. Size:205K semihow
hfp5n60u.pdf

May 2012BVDSS = 600 VRDS(on) typ HFP5N60U ID = 4.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area L

9.5. Size:207K semihow
hfp5n65s.pdf

Oct 2009BVDSS = 650 VRDS(on) typ = 2.3 HFP5N65SID = 4.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

9.6. Size:203K semihow
hfp5n50s.pdf

OCT 2008BVDSS = 500 VRDS(on) typ HFP5N50S ID = 5.0 A500V N-Channel MOSFETTO-220FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RD

9.7. Size:203K semihow
hfp5n50u.pdf

May 2012BVDSS = 500 VRDS(on) typ HFP5N50U ID = 5.0 A500V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Low

9.8. Size:172K semihow
hfp5n60s.pdf

Aug 2007BVDSS = 600 VRDS(on) typ HFP5N60SID = 4.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(

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