HFS12N65U Todos los transistores

 

HFS12N65U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS12N65U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de HFS12N65U MOSFET

   - Selección ⓘ de transistores por parámetros

 

HFS12N65U datasheet

 ..1. Size:158K  semihow
 hfs12n65u.pdf pdf_icon

HFS12N65U

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65U ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:806K  semihow
 hfs12n65sa.pdf pdf_icon

HFS12N65U

July 2021 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65SA ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 41 nC (Typ.) Extended Safe Ope

 6.2. Size:240K  semihow
 hfs12n65s.pdf pdf_icon

HFS12N65U

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) E

 6.3. Size:598K  semihow
 hfs12n65js.pdf pdf_icon

HFS12N65U

Mar. 2023 HFS12N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 12 A Excellent Switching Characteristics RDS(on), Typ 0.7 100% Avalanche Tested Qg, Typ 44.4 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum

MOSTRAR MÁS

Otros transistores... HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , HFS12N60U , HFS12N65S , NCEP15T14 , HFS13N50S , HFS13N50U , HFS13N60U , HFS13N65U , HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U .

History: IRHY57234CMSE | IRLL024N | SFB043N150C3 | TK12A50D | BRCS150N12SZC | AOD438 | PJP5NA50

 

 
Back to Top

 


 
.