HFS12N65U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS12N65U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 52 W
Tensión drenaje-fuente (Vds): 650 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4.5 V
Carga de compuerta (Qg): 42 nC
Tiempo de elevación (tr): 45 nS
Conductancia de drenaje-sustrato (Cd): 170 pF
Resistencia drenaje-fuente RDS(on): 0.78 Ohm
Empaquetado / Estuche: TO-220F
Búsqueda de reemplazo de MOSFET HFS12N65U
HFS12N65U Datasheet (PDF)
1.1. hfs12n65u.pdf 
Size:158K _update_mosfet
July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65U ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
2.1. hfs12n65s.pdf Size:240K _update_mosfet
Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E
3.1. hfs12n60s.pdf Size:252K _update_mosfet
Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HFS12N60S ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E
3.2. hfs12n60u.pdf Size:158K _update_mosfet
July 2014 BVDSS = 600 V RDS(on) typ = 0.53 HFS12N60U ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
