HFS13N50S Todos los transistores

 

HFS13N50S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS13N50S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de HFS13N50S MOSFET

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HFS13N50S datasheet

 ..1. Size:154K  semihow
 hfs13n50s.pdf pdf_icon

HFS13N50S

March 2014 BVDSS = 500 V RDS(on) typ HFS13N50S ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area

 6.1. Size:151K  semihow
 hfs13n50u.pdf pdf_icon

HFS13N50S

Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFS13N50U ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Lo

 6.2. Size:930K  haolin elec
 hfs13n50.pdf pdf_icon

HFS13N50S

Sep 2009 BVDSS = 500 V RDS(on) typ = 0.4 HFS13N50 ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) Ext

 8.1. Size:185K  semihow
 hfs13n60u.pdf pdf_icon

HFS13N50S

Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFS13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , HFS12N60U , HFS12N65S , HFS12N65U , AON7506 , HFS13N50U , HFS13N60U , HFS13N65U , HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U , HFS2N65S .

 

 
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