HFS13N65U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS13N65U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de HFS13N65U MOSFET
HFS13N65U PDF Specs
hfs13n65u.pdf
March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFS13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area... See More ⇒
hfs13n60u.pdf
Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFS13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒
hfs13n50u.pdf
Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFS13N50U ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒
hfs13n50s.pdf
March 2014 BVDSS = 500 V RDS(on) typ HFS13N50S ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area ... See More ⇒
Otros transistores... HFS11N40 , HFS12N60S , HFS12N60U , HFS12N65S , HFS12N65U , HFS13N50S , HFS13N50U , HFS13N60U , TK10A60D , HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 .
History: IRFP343
History: IRFP343
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