HFS2N60 Todos los transistores

 

HFS2N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS2N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-220F
 

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HFS2N60 datasheet

 ..1. Size:150K  semihow
 hfs2n60.pdf pdf_icon

HFS2N60

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 0.1. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N60

Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles

 0.2. Size:163K  semihow
 hfs2n60s.pdf pdf_icon

HFS2N60

March 2014 BVDSS = 600 V RDS(on) typ HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area

 0.3. Size:356K  semihow
 hfs2n60fs.pdf pdf_icon

HFS2N60

Oct 2016 HFS2N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Paramete

MOSTRAR MÁS

Otros transistores... HFS12N60U , HFS12N65S , HFS12N65U , HFS13N50S , HFS13N50U , HFS13N60U , HFS13N65U , HFS18N50U , BS170 , HFS2N60S , HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 , HFS3N80 , HFS4N50 .

History: 2N4416AC1D

 

 
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