HFS2N90 Todos los transistores

 

HFS2N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS2N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 39 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 17 nC

Tiempo de elevación (tr): 55 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 5.6 Ohm

Empaquetado / Estuche: TO-220F

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HFS2N90 Datasheet (PDF)

1.1. hfs2n90.pdf Size:202K _update_mosfet

HFS2N90
HFS2N90

Feb 2014 BVDSS = 900 V RDS(on) typ HFS2N90 ID = 2.2 A 900V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area

5.1. hfs2n70s.pdf Size:179K _update_mosfet

HFS2N90
HFS2N90

Dec 2009 BVDSS = 700 V RDS(on) typ HFS2N70S ID = 1.6 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS

5.2. hfs2n65u.pdf Size:302K _update_mosfet

HFS2N90
HFS2N90

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFS2N65U ID = 2 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

 5.3. hfs2n60u.pdf Size:301K _update_mosfet

HFS2N90
HFS2N90

Nov 2013 BVDSS = 600 V RDS(on) typ HFS2N60U ID = 2 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower

5.4. hfs2n65s.pdf Size:182K _update_mosfet

HFS2N90
HFS2N90

Sep 2009 BVDSS = 650 V RDS(on) typ HFS2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 5.5. hfs2n60s.pdf Size:161K _update_mosfet

HFS2N90
HFS2N90

March 2014 BVDSS = 600 V RDS(on) typ HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area

5.6. hfs2n60.pdf Size:150K _update_mosfet

HFS2N90
HFS2N90

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

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