HFS2N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS2N90
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.6 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de HFS2N90 MOSFET
HFS2N90 Datasheet (PDF)
hfs2n90.pdf

Feb 2014BVDSS = 900 VRDS(on) typ HFS2N90ID = 2.2 A900V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area
hfs2n60.pdf

July 2005BVDSS = 600 VRDS(on) typ HFS2N60ID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS
hfp2n60f hfs2n60f.pdf

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles
hfs2n65u.pdf

Nov 2013BVDSS = 650 VRDS(on) typ = 5 HFS2N65U ID = 2 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower
Otros transistores... HFS13N65U , HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U , HFS2N65S , HFS2N65U , HFS2N70S , 13N50 , HFS3N80 , HFS4N50 , HFS4N60 , HFS4N90 , HFS50N06 , HFS5N50S , HFS5N50U , HFS5N60S .
History: 40673 | MRF176GV | IRF615 | WMS175N10HG4 | BUK9Y15-100E
History: 40673 | MRF176GV | IRF615 | WMS175N10HG4 | BUK9Y15-100E



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0604AGQ | JMSL0604AG | JMSL0603PG | JMSL0603BGQ | JMSL0603BG | JMSL0603AK | JMSL0602PG | JMSL0602MG | JMSL0602AGQ | JMSL0602AG | JMSL0601TG | JMSL0601BGQ | JMSL0601BG | JMSL0601AGQ | JMSL0601AG | JMTP330N06D
Popular searches
bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c