HFS6N65U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS6N65U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de HFS6N65U MOSFET
HFS6N65U Datasheet (PDF)
hfs6n65u.pdf

July 2012BVDSS = 650 VRDS(on) typ HFS6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
hfs6n60u.pdf

July 2012BVDSS = 600 VRDS(on) typ HFS6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
hfs6n90.pdf

Dec 2005BVDSS = 900 VRDS(on) typ HFS6N90ID = 6.0 A900V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(
hfs6n70u.pdf

March 2013BVDSS = 700 VRDS(on) typ = 1.8 HFS6N70U ID = 6.0 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
Otros transistores... HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , HFS640 , HFS6N60U , NCEP15T14 , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 .
History: CMLDM5757 | SI7664DP | 2N7008 | RP1H065SP | BUZ231 | 12N25 | HM20N50A
History: CMLDM5757 | SI7664DP | 2N7008 | RP1H065SP | BUZ231 | 12N25 | HM20N50A



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