HFS6N65U MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HFS6N65U PDF Specs

..1. Size:306K semihow
hfs6n65u.pdf pdf_icon

July 2012 BVDSS = 650 V RDS(on) typ HFS6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

8.1. Size:306K semihow
hfs6n60u.pdf pdf_icon

July 2012 BVDSS = 600 V RDS(on) typ HFS6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

9.1. Size:173K semihow
hfs6n90.pdf pdf_icon

Dec 2005 BVDSS = 900 V RDS(on) typ HFS6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

9.2. Size:305K semihow
hfs6n70u.pdf pdf_icon

March 2013 BVDSS = 700 V RDS(on) typ = 1.8 HFS6N70U ID = 6.0 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Otros transistores... HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , HFS640 , HFS6N60U , IRF1405 , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 .