HUF75332S3ST Todos los transistores

 

HUF75332S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75332S3ST

Código: 75332S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 145 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 60 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 70 nC

Tiempo de elevación (tr): 90 nS

Conductancia de drenaje-sustrato (Cd): 480 pF

Resistencia drenaje-fuente RDS(on): 0.019 Ohm

Empaquetado / Estuche: TO-263AB

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HUF75332S3ST Datasheet (PDF)

1.1. huf75332s3st.pdf Size:305K _update_mosfet

HUF75332S3ST
HUF75332S3ST

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

2.1. huf75332.pdf Size:214K _intersil

HUF75332S3ST
HUF75332S3ST

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - SPICE and SABER Thermal Impedance

 3.1. huf75337s3.pdf Size:122K _update_mosfet

HUF75332S3ST
HUF75332S3ST

HUF75337G3, HUF75337P3, S E M I C O N D U C T O R HUF75337S3, HUF75337S3S 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V These N-Channel power MOS- FETs are manufactured using • Ultra Low On-Resistance, rDS(ON) = 0.014Ω the innovative UltraFET™ pro- cess. This advanced process technology achieves the low- • Diode Exhibits

3.2. huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf Size:331K _fairchild_semi

HUF75332S3ST
HUF75332S3ST

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 3.3. huf75337g3 huf75337p3 huf75337s3s.pdf Size:226K _fairchild_semi

HUF75332S3ST
HUF75332S3ST

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

3.4. huf75339g3 huf75339p3 huf75339s3s.pdf Size:308K _fairchild_semi

HUF75332S3ST
HUF75332S3ST

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

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