HUF75332S3ST Todos los transistores

 ..1. Size:305K  fairchild semi
 huf75332s3st.pdf

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

 6.1. Size:827K  onsemi
 huf75332p3.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:214K  intersil
 huf75332.pdf

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. Models This advanced process technology - SPICE and SABER Thermal Impedance

 7.1. Size:331K  fairchild semi
 huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impeda

 7.2. Size:226K  fairchild semi
 huf75337g3 huf75337p3 huf75337s3s.pdf

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 7.3. Size:308K  fairchild semi
 huf75339g3 huf75339p3 huf75339s3s.pdf

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 7.4. Size:803K  onsemi
 huf75339p3.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.5. Size:122K  harris semi
 huf75337s3.pdf

HUF75337G3, HUF75337P3, S E M I C O N D U C T O R HUF75337S3, HUF75337S3S 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description 62A, 55V These N-Channel power MOS- FETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.014 the innovative UltraFET pro- cess. This advanced process technology achieves the low- Diode Exhibits