HUF75337S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUF75337S3
   Código: 75337S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 91 nC
   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 625 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO-262AA

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HUF75337S3 Datasheet (PDF)

..1. Size:122K harris semi
huf75337s3.pdf

HUF75337G3, HUF75337P3,S E M I C O N D U C T O RHUF75337S3, HUF75337S3S62A, 55V, 0.014 Ohm, N-ChannelUltraFET Power MOSFETsJanuary 1998Features Description 62A, 55V These N-Channel power MOS-FETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.014the innovative UltraFET pro-cess. This advanced process technology achieves the low- Diode Exhibits

0.1. Size:226K fairchild semi
huf75337g3 huf75337p3 huf75337s3s.pdf

HUF75337G3, HUF75337P3, HUF75337S3SData Sheet December 200175A, 55V, 0.014 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

7.1. Size:331K fairchild semi
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf

HUF75333G3, HUF75333P3, HUF75333S3S,HUF75333S3Data Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impeda

7.2. Size:305K fairchild semi
huf75332s3st.pdf

HUF75332G3, HUF75332P3, HUF75332S3SData Sheet January 200560A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models a

7.3. Size:308K fairchild semi
huf75339g3 huf75339p3 huf75339s3s.pdf

HUF75339G3, HUF75339P3, HUF75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

7.4. Size:827K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.5. Size:803K onsemi
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7.6. Size:214K intersil
huf75332.pdf

HUF75332G3, HUF75332P3, HUF75332S3SData Sheet June 1999 File Number 4489.360A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- SPICE and SABER Thermal Impedance

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