HUF75343S3ST Datasheet. Equivalente

 ..1. Size:280K  fairchild semi
 huf75343s3 huf75343s3st.pdf

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance PSPICE and

 6.1. Size:205K  fairchild semi
 huf75343.pdf

HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance PSPICE and SABER Mode

 7.1. Size:430K  fairchild semi
 huf75344a3.pdf

October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8m Features Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using Fairchild Semiconductor s innovative UItraFET process. This advanced RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan

 7.2. Size:326K  fairchild semi
 huf75345g3 huf75345p3 huf75345s3s huf75345s3 huf75345s3st.pdf

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models

 7.3. Size:588K  onsemi
 huf75345g3 huf75345p3 huf75345s3s.pdf

MOSFET Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S www.onsemi.com Description These N-Channel power MOSFETs are manufactured using VDSS RDS(ON) MAX ID MAX the innovative UltraFET process. This advanced process technology 55 V 7 mW 75 A achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This devic

 7.4. Size:380K  onsemi
 huf75344g3 huf75344p3.pdf

HUF75344G3, HUF75344P3 Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 75 A, 8 m 75A, 55V These N-Channel power MOSFETs are manufactured Simulation Models using the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on- Models resistance per silicon area, result

 7.5. Size:142K  intersil
 huf75344.pdf

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. Models This advanced process technology - Thermal Impedance PSPICE and S

 7.6. Size:254K  inchange semiconductor
 huf75345s3st.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor HUF75345S3ST DESCRIPTION Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM