HUF75344A3 Todos los transistores

 

HUF75344A3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75344A3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 288.5 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 160 nC

Tiempo de elevación (tr): 126 nS

Conductancia de drenaje-sustrato (Cd): 980 pF

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO-3PN

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HUF75344A3 Datasheet (PDF)

1.1. huf75344a3.pdf Size:430K _update_mosfet

HUF75344A3
HUF75344A3

October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced • RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan

2.1. huf75344.pdf Size:142K _intersil

HUF75344A3
HUF75344A3

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - Thermal Impedance PSPICE and S

 3.1. huf75345s3 huf75345s3st.pdf Size:326K _update_mosfet

HUF75344A3
HUF75344A3

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models

3.2. huf75343s3 huf75343s3st.pdf Size:280K _update_mosfet

HUF75344A3
HUF75344A3

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and

 3.3. huf75343.pdf Size:205K _fairchild_semi

HUF75344A3
HUF75344A3

HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and SABER Mode

3.4. huf75345g3 huf75345p3 huf75345s3s.pdf Size:326K _fairchild_semi

HUF75344A3
HUF75344A3

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves th

 3.5. huf75345s3st.pdf Size:254K _inchange_semiconductor

HUF75344A3
HUF75344A3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor HUF75345S3ST ·DESCRIPTION ·Drain Current: I = 75A@ T =25℃ D C ·Drain Source Voltage : V = 55V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM

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