HUF75344A3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75344A3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 288.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 126 nS
Cossⓘ - Capacitancia de salida: 980 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO-3PN
Búsqueda de reemplazo de HUF75344A3 MOSFET
HUF75344A3 Datasheet (PDF)
huf75344a3.pdf

October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan
huf75344g3 huf75344p3.pdf

HUF75344G3, HUF75344P3Data Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 75 A, 8 m 75A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABERprocess technology achieves the lowest possible on-Modelsresistance per silicon area, result
huf75344.pdf

HUF75344G3, HUF75344P3, HUF75344S3SData Sheet January 2000 File Number 4402.775A, 55V, 0.008 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- Thermal Impedance PSPICE and S
huf75343.pdf

HUF75343G3, HUF75343P3, HUF75343S3SData Sheet December 200175A, 55V, 0.009 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE and SABER Mode
Otros transistores... HS8K11 , HT-3201 , HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , 2SK3878 , HUF75345S3 , HUF75345S3ST , HUF75531SK8T , HUF75545S3 , HUF75545S3ST , HUF75617D3 , HUF75617D3S , HUF75617D3ST .
History: NCE1503S | SFS06R10GF | 2SK974L | VBZM80N03 | GSM4134 | R6011KNX | STB75NF75T4
History: NCE1503S | SFS06R10GF | 2SK974L | VBZM80N03 | GSM4134 | R6011KNX | STB75NF75T4



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