HUF75631SK8T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75631SK8T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm

Encapsulados: MS-012AA

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HUF75631SK8T datasheet

 ..1. Size:249K  fairchild semi
 huf75631sk8t.pdf pdf_icon

HUF75631SK8T

HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.039 , VGS = 10V 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

 3.1. Size:254K  fairchild semi
 huf75631sk8.pdf pdf_icon

HUF75631SK8T

HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.039 , VGS = 10V 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

 5.1. Size:202K  fairchild semi
 huf75631s3s.pdf pdf_icon

HUF75631SK8T

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice an

 5.2. Size:200K  fairchild semi
 huf75631s3st.pdf pdf_icon

HUF75631SK8T

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice an

MOSTRAR MÁS

Otros transistores... HUF75531SK8T, HUF75545S3, HUF75545S3ST, HUF75617D3, HUF75617D3S, HUF75617D3ST, HUF75623S3ST, HUF75631S3ST, IRLB4132, HUF75637S3, HUF75637S3ST, HUF75639S3ST, HUF75645S3ST, HUF75829D3, HUF75829D3S, HUF75829D3ST, HUF75831SK8T