HUF76407D3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF76407D3ST

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm

Encapsulados: TO-252AA

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HUF76407D3ST datasheet

 ..1. Size:149K  fairchild semi
 huf76407d3st.pdf pdf_icon

HUF76407D3ST

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and

 3.1. Size:234K  fairchild semi
 huf76407d3 huf76407d3s.pdf pdf_icon

HUF76407D3ST

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and

 3.2. Size:792K  onsemi
 huf76407d3s.pdf pdf_icon

HUF76407D3ST

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:266K  fairchild semi
 huf76407dk8.pdf pdf_icon

HUF76407D3ST

HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090 , VGS = 10V - rDS(ON) = 0.105 , VGS = 5V Simulation Models 5 - Temperature Compensated PSPICE and SABER Electrical Models 1 2 - SPICE and SABER Thermal Impedanc

MOSTRAR MÁS

Otros transistores... HUF75842S3ST, HUF75925D3ST, HUF75939P3, HUF76009D3ST, HUF76013D3S, HUF76013D3ST, HUF76013P3, HUF76145S3, AON7506, HUF76419D3ST, HUF76419S3ST, HUF76429D3ST, HUF76429S3ST, HUF76437S3ST, HUF76439S3ST, HUF76445S3ST, HUF76609D3ST