HUF76619D3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF76619D3ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 82 nS
Cossⓘ - Capacitancia de salida: 138 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: TO-252AA
Búsqueda de reemplazo de HUF76619D3ST MOSFET
- Selecciónⓘ de transistores por parámetros
HUF76619D3ST datasheet
..1. Size:222K fairchild semi
huf76619d3st.pdf 
HUF76619D3, HUF76619D3S Data Sheet December 2001 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.085 , VGS = 10V DRAIN GATE - rDS(ON) = 0.087 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE
4.1. Size:220K fairchild semi
huf76619d3-s.pdf
HUF76619D3, HUF76619D3S Data Sheet December 2001 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.085 , VGS = 10V DRAIN GATE - rDS(ON) = 0.087 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE
8.1. Size:218K fairchild semi
huf76609d3st.pdf
HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance DRAIN DRAIN - rDS(ON) = 0.160 , VGS = 10V SOURCE (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.165 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER
8.2. Size:201K fairchild semi
huf76629d3st.pdf
HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052 , VGS = 10V DRAIN - rDS(ON) = 0.054 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect
8.3. Size:203K fairchild semi
huf76629d3-s.pdf
HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052 , VGS = 10V DRAIN - rDS(ON) = 0.054 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect
8.4. Size:369K fairchild semi
huf76633p3 f085.pdf
HUF76633P3_F085 Data Sheet April 2012 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB Ultra Low On-Resistance - rDS(ON) = 0.035 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.036 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Model
8.5. Size:216K fairchild semi
huf76633s3st.pdf
HUF76633P3, HUF76633S3S Data Sheet December 2001 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.035 , VGS = 10V DRAIN GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El
8.6. Size:218K fairchild semi
huf76645p3-s3s.pdf
HUF76645P3, HUF76645S3S Data Sheet December 2001 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.015 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect
8.7. Size:303K fairchild semi
huf76645s f085.pdf
HUFA76645S3ST_F085 Data Sheet September 2010 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features Ultra Low On-Resistance JEDEC TO-263AB - rDS(ON) = 0.014 , VGS = 10V - rDS(ON) = 0.015 , VGS = 5V DRAIN Simulation Models (FLANGE) - Temperature Compensated PSPICE and SABER Electrical Models GATE - Spice and SABER Thermal Imped
8.8. Size:218K fairchild semi
huf76639s3s.pdf
HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.026 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.027 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele
8.9. Size:220K fairchild semi
huf76609d3s.pdf
HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance DRAIN DRAIN - rDS(ON) = 0.160 , VGS = 10V SOURCE (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.165 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER
8.10. Size:244K fairchild semi
huf76639s f085.pdf
HUF76639S3ST_F085 July 2012 50A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-263AB Ultra Low On-Resistance DRAIN - rDS(ON) = 0.026 , VGS = 10V (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com
8.11. Size:223K fairchild semi
huf76639p3-s3s.pdf
HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.026 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.027 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele
8.12. Size:223K fairchild semi
huf76633p3-s3s.pdf
HUF76633P3, HUF76633S3S Data Sheet December 2001 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.035 , VGS = 10V DRAIN GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El
8.13. Size:844K onsemi
huf76639s3s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.14. Size:428K onsemi
huf76629d3st-f085.pdf
HUF76629D3ST-F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m D Features Typ rDS(on) = 41m at VGS = 10V, ID = 20A Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant Qualified to AEC Q101 S Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Distributed Power Architectures and VRM Pr
8.15. Size:844K onsemi
huf76609d3s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.16. Size:843K cn vbsemi
huf76633p3.pdf
HUF76633P3 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C,
Otros transistores... HUF76419D3ST, HUF76419S3ST, HUF76429D3ST, HUF76429S3ST, HUF76437S3ST, HUF76439S3ST, HUF76445S3ST, HUF76609D3ST, 2SK3568, HUF76629D3ST, HUF76633S3ST, HUFA75307D3, HUFA75307D3S, HUFA75307D3ST, HUFA75307P3, HUFA75309D3, HUFA75309D3S
