HUF76629D3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HUF76629D3, HUF76629D3SData Sheet December 200120A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINSOURCE (FLANGE) - rDS(ON) = 0.052, VGS = 10VDRAIN- rDS(ON) = 0.054, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

HUF76629D3ST-F085N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52mDFeatures Typ rDS(on) = 41m at VGS = 10V, ID = 20A Typ Qg(tot) = 39nC at VGS = 10V, ID = 20AG UIS Capability RoHS Compliant Qualified to AEC Q101SApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Distributed Power Architectures and VRM Pr

HUF76629D3, HUF76629D3SData Sheet December 200120A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINSOURCE (FLANGE) - rDS(ON) = 0.052, VGS = 10VDRAIN- rDS(ON) = 0.054, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

HUF76619D3, HUF76619D3SData Sheet December 200118A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.085, VGS = 10VDRAINGATE- rDS(ON) = 0.087, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE

HUF76609D3, HUF76609D3SData Sheet December 200110A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceDRAIN DRAIN- rDS(ON) = 0.160, VGS = 10VSOURCE (FLANGE) (FLANGE)DRAINGATE - rDS(ON) = 0.165, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER

HUF76633P3_F085Data Sheet April 201238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.036, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Model

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

HUF76645P3, HUF76645S3SData Sheet December 200175A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.015, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

HUFA76645S3ST_F085Data Sheet September 201075A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeatures Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10V- rDS(ON) = 0.015, VGS = 5VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABER Electrical ModelsGATE- Spice and SABER Thermal Imped

HUF76639P3, HUF76639S3SData Sheet December 200150A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEle

HUF76619D3, HUF76619D3SData Sheet December 200118A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.085, VGS = 10VDRAINGATE- rDS(ON) = 0.087, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE

HUF76609D3, HUF76609D3SData Sheet December 200110A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceDRAIN DRAIN- rDS(ON) = 0.160, VGS = 10VSOURCE (FLANGE) (FLANGE)DRAINGATE - rDS(ON) = 0.165, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER

HUF76639S3ST_F085July 201250A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-263AB Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.026, VGS = 10V (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsSOURCE- Spice and SABER Thermal Impedance Models- www.fairchildsemi.com

HUF76639P3, HUF76639S3SData Sheet December 200150A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEle

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HUF76633P3www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,