IXTP22N20MA Todos los transistores

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IXTP22N20MA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP22N20MA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 22 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: TO220

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IXTP22N20MA Datasheet (PDF)

4.1. ixta220n055t ixtp220n055t.pdf Size:214K _ixys

IXTP22N20MA
IXTP22N20MA

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 220 A ILRMS Lead Cu

4.2. ixta220n075t ixtp220n075t.pdf Size:175K _ixys

IXTP22N20MA
IXTP22N20MA

Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C 220 A ILRMS Lead Current

5.1. ixta2n80 ixtp2n80.pdf Size:113K _ixys

IXTP22N20MA
IXTP22N20MA

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 ? ? RDS(on) = 6.2 ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse

5.2. ixta2n100 ixtp2n100.pdf Size:76K _ixys

IXTP22N20MA
IXTP22N20MA

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXT

5.3. ixta240n055t ixtp240n055t.pdf Size:173K _ixys

IXTP22N20MA
IXTP22N20MA

Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C 240 A ILRMS Lead Current

5.4. ixta200n075t ixtp200n075t.pdf Size:215K _ixys

IXTP22N20MA
IXTP22N20MA

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 200 A ILRMS Lead

5.5. ixta200n085t ixtp200n085t.pdf Size:215K _ixys

IXTP22N20MA
IXTP22N20MA

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 200 A ILRMS Lead

5.6. ixta260n055t2 ixtp260n055t2.pdf Size:248K _ixys

IXTP22N20MA
IXTP22N20MA

TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET ? ? RDS(on) ? ? ? 3.3m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 55 V S (TAB) VDGR TJ = 25C to 175C, RGS = 1M? 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 260 A ILRMS Lead Current Limit, RMS

5.7. ixtp2r4n50p ixty2r4n50p.pdf Size:90K _ixys

IXTP22N20MA
IXTP22N20MA

IXTP 2R4N50P VDSS = 500 V PolarHVTM IXTY 2R4N50P ID25 = 2.4 A Power MOSFET ? ? RDS(on) ? 3.75 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGSM Transient 40 V (TAB) G VGSM Continuous 30 V D S ID25 TC = 25C 2.4 A IDM TC = 25C, pulse width

Otros transistores... IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB , IXTP1N100 , IXTP22N15MA , IXTP22N15MB , 2N5485 , IXTP22N20MB , IXTP2N80 , IXTP30N08MA , IXTP30N08MB , IXTP30N10MA , IXTP30N10MB , IXTP8N45MA , IXTP8N45MB .

 


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