HUFA75321D3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUFA75321D3ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 93 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Encapsulados: TO-252AA
Búsqueda de reemplazo de HUFA75321D3ST MOSFET
- Selecciónⓘ de transistores por parámetros
HUFA75321D3ST datasheet
hufa75321d3 hufa75321d3st.pdf
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves
hufa75321d3 hufa75321d3s.pdf
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves
hufa75321p3 hufa75321s3s hufa75321s3st.pdf
HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t
hufa75329p3 hufa75329s3s.pdf
HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on th
Otros transistores... HUFA75307D3S, HUFA75307D3ST, HUFA75307P3, HUFA75309D3, HUFA75309D3S, HUFA75309P3, HUFA75309T3ST, HUFA75321D3, 2N60, HUFA75321P3, HUFA75321S3S, HUFA75321S3ST, HUFA75329D3, HUFA75329D3S, HUFA75329D3ST, HUFA75329P3, HUFA75329S3S
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
nte102a | tip31cg | s9015 transistor | irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404
