HUFA75329D3 Todos los transistores

 

HUFA75329D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA75329D3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 128 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 405 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TO-251AA
 

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HUFA75329D3 Datasheet (PDF)

 ..1. Size:309K  fairchild semi
 hufa75329d3st hufa75329d3 hufa75329d3s.pdf pdf_icon

HUFA75329D3

HUFA75329D3, HUFA75329D3SData Sheet June 1999 File Number 4426.420A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Mode

 5.1. Size:292K  fairchild semi
 hufa75329p3 hufa75329s3s.pdf pdf_icon

HUFA75329D3

HUFA75329G3, HUFA75329P3, HUFA75329S3SData Sheet June 200249A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on th

 6.1. Size:232K  fairchild semi
 hufa75321p3 hufa75321s3s hufa75321s3st.pdf pdf_icon

HUFA75329D3

HUFA75321P3, HUFA75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves t

 6.2. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf pdf_icon

HUFA75329D3

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

MOSTRAR MÁS

Otros transistores... HUFA75309D3S , HUFA75309P3 , HUFA75309T3ST , HUFA75321D3 , HUFA75321D3ST , HUFA75321P3 , HUFA75321S3S , HUFA75321S3ST , RU6888R , HUFA75329D3S , HUFA75329D3ST , HUFA75329P3 , HUFA75329S3S , HUFA75332G3 , HUFA75332S3S , HUFA75333P3 , HUFA75333S3S .

History: DAMH160N200

 

 
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