HUFA75329S3S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA75329S3S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 128 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 405 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: TO-263AB

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HUFA75329S3S datasheet

 ..1. Size:292K  fairchild semi
 hufa75329p3 hufa75329s3s.pdf pdf_icon

HUFA75329S3S

HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on th

 5.1. Size:309K  fairchild semi
 hufa75329d3st hufa75329d3 hufa75329d3s.pdf pdf_icon

HUFA75329S3S

HUFA75329D3, HUFA75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Mode

 6.1. Size:232K  fairchild semi
 hufa75321p3 hufa75321s3s hufa75321s3st.pdf pdf_icon

HUFA75329S3S

HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t

 6.2. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf pdf_icon

HUFA75329S3S

HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves

MOSTRAR MÁS

Otros transistores... HUFA75321D3ST, HUFA75321P3, HUFA75321S3S, HUFA75321S3ST, HUFA75329D3, HUFA75329D3S, HUFA75329D3ST, HUFA75329P3, 7N60, HUFA75332G3, HUFA75332S3S, HUFA75333P3, HUFA75333S3S, HUFA75333S3ST, HUFA75337G3, HUFA75337P3, HUFA75337S3S