HUFA75332S3S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA75332S3S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 145 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: TO-263AB

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HUFA75332S3S datasheet

 ..1. Size:268K  fairchild semi
 hufa75332g3 hufa75332s3s.pdf pdf_icon

HUFA75332S3S

HUFA75332G3, HUFA75332P3, HUFA75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

 6.1. Size:233K  fairchild semi
 hufa75333p3 hufa75333s3s hufa75333s3st.pdf pdf_icon

HUFA75332S3S

HUFA75333G3, HUFA75333P3, HUFA75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 6.2. Size:223K  fairchild semi
 hufa75337g3 hufa75337p3 hufa75337s3s hufa75337s3st.pdf pdf_icon

HUFA75332S3S

HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 6.3. Size:226K  fairchild semi
 hufa75339g3 hufa75339s3s hufa75339s3st.pdf pdf_icon

HUFA75332S3S

HUFA75339G3, HUFA75339P3, HUFA75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

MOSTRAR MÁS

Otros transistores... HUFA75321S3S, HUFA75321S3ST, HUFA75329D3, HUFA75329D3S, HUFA75329D3ST, HUFA75329P3, HUFA75329S3S, HUFA75332G3, IRFZ46N, HUFA75333P3, HUFA75333S3S, HUFA75333S3ST, HUFA75337G3, HUFA75337P3, HUFA75337S3S, HUFA75337S3ST, HUFA75339G3