HUFA75339S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUFA75339S3S
   Código: 75339S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 200 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 75 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 110 nC
   Tiempo de subida (tr): 60 nS
   Conductancia de drenaje-sustrato (Cd): 700 pF
   Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
   Paquete / Cubierta: TO-263AB

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HUFA75339S3S Datasheet (PDF)

..1. Size:226K fairchild semi
hufa75339g3 hufa75339s3s hufa75339s3st.pdf

HUFA75339G3, HUFA75339P3, HUFA75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

5.1. Size:258K inchange semiconductor
hufa75339g3.pdf

Isc N-Channel MOSFET Transistor HUFA75339G3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

6.1. Size:233K fairchild semi
hufa75333p3 hufa75333s3s hufa75333s3st.pdf

HUFA75333G3, HUFA75333P3, HUFA75333S3SData Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

6.2. Size:223K fairchild semi
hufa75337g3 hufa75337p3 hufa75337s3s hufa75337s3st.pdf

HUFA75337G3, HUFA75337P3, HUFA75337S3SData Sheet December 200175A, 55V, 0.014 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

6.3. Size:268K fairchild semi
hufa75332g3 hufa75332s3s.pdf

HUFA75332G3, HUFA75332P3, HUFA75332S3SData Sheet June 200260A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models a

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