HUFA75617D3S Datasheet. Equivalente

 ..1. Size:196K  fairchild semi
 hufa75617d3s hufa75617d3st.pdf

HUFA75617D3, HUFA75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance SOURCE DRAIN DRAIN - rDS(ON) = 0.090 , VGS = 10V GATE (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models DRAIN SOURCE - Spice and SABER

 7.1. Size:200K  fairchild semi
 hufa75637p3 hufa75637s3s hufa75637s3st.pdf

HUFA75637P3, HUFA75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.030 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice a

 7.2. Size:352K  fairchild semi
 hufa75645s3s.pdf

HUFA75645S3S Data Sheet December 2001 N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 m Packaging Features Ultra Low On-Resistance JEDEC TO-263AB - rDS(ON) = 0.014 , VGS = 10V DRAIN Simulation Models (FLANGE) - Temperature Compensated PSPICE and SABER Electrical Models GATE - Spice and Saber Thermal Impedance Models SOURCE - www.fairchild.com Peak Current

 7.3. Size:198K  fairchild semi
 hufa75623s3st.pdf

HUFA75623P3, HUFA75623S3ST Data Sheet December 2001 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.064 , VGS = 10V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER

 7.4. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3s.pdf

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

 7.5. Size:152K  fairchild semi
 hufa75645p3.pdf

HUFA75645P3, HUFA75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.014 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and Saber

 7.6. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3st.pdf

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

 7.7. Size:195K  fairchild semi
 hufa75652g3.pdf

HUFA75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.008 , VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN HUFA75652G3