HUFA75645P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUFA75645P3
   Código: 75645P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 198 nC
   trⓘ - Tiempo de subida: 117 nS
   Cossⓘ - Capacitancia de salida: 810 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET HUFA75645P3

HUFA75645P3 Datasheet (PDF)

..1. Size:152K fairchild semi
hufa75645p3.pdf

HUFA75645P3, HUFA75645S3SData Sheet December 200175A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.014, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and Saber

5.1. Size:352K fairchild semi
hufa75645s3s.pdf

HUFA75645S3SData Sheet December 2001N-Channel UltraFET Power MOSFET100 V, 75 A, 14 mPackaging Features Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABERElectrical ModelsGATE- Spice and Saber Thermal Impedance ModelsSOURCE- www.fairchild.com Peak Current

7.1. Size:200K fairchild semi
hufa75637p3 hufa75637s3s hufa75637s3st.pdf

HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a

7.2. Size:196K fairchild semi
hufa75617d3s hufa75617d3st.pdf

HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER

7.3. Size:198K fairchild semi
hufa75623s3st.pdf

HUFA75623P3, HUFA75623S3STData Sheet December 200122A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.064, VGS = 10VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER

7.4. Size:221K fairchild semi
hufa75639g3 hufa75639p3 hufa75639s3s.pdf

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

7.5. Size:221K fairchild semi
hufa75639g3 hufa75639p3 hufa75639s3st.pdf

7.6. Size:195K fairchild semi
hufa75652g3.pdf

HUFA75652G3Data Sheet December 200175A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.008, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAINHUFA75652G3

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: