HUFA75829D3S Todos los transistores

 

HUFA75829D3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA75829D3S
   Código: 75829D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO-252AA

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HUFA75829D3S Datasheet (PDF)

 ..1. Size:191K  fairchild semi
huf75829d3st huf75829d3 huf75829d3s hufa75829d3s hufa75829d3st.pdf

HUFA75829D3S
HUFA75829D3S

HUFA75829D3, HUFA75829D3SData Sheet December 200118A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.110, VGS = 10VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice

 6.1. Size:210K  fairchild semi
hufa75823d3s hufa75823d3st.pdf

HUFA75829D3S
HUFA75829D3S

HUFA75823D3, HUFA75823D3SData Sheet December 200114A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN (FLANGE) Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.150, VGS = 10VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice

 7.1. Size:243K  fairchild semi
hufa75852g3.pdf

HUFA75829D3S
HUFA75829D3S

HUFA75852G3_F085Data Sheet December 201175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS CompliantDRAIN(TAB)Ordering InformationSymbolPART NUMBER PACKAGE BRA

 7.2. Size:139K  fairchild semi
hufa75842p3 hufa75842s3s hufa75842s3st.pdf

HUFA75829D3S
HUFA75829D3S

HUFA75842P3, HUFA75842S3SData Sheet November 2000 File Number 496843A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER GATESOURCEElectrical ModelsDRAIN-

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