HUFA76413P3 Datasheet. Equivalente

 ..1. Size:206K  fairchild semi
 hufa76413p3.pdf

HUFA76413P3 Data Sheet December 2001 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features SOURCE Ultra Low On-Resistance DRAIN - rDS(ON) = 0.049 , VGS = 10V GATE - rDS(ON) = 0.056 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice and SABER Thermal

 5.1. Size:204K  fairchild semi
 hufa76413d3 hufa76413d3s.pdf

HUFA76413D3, HUFA76413D3S Data Sheet December 2001 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN DRAIN SOURCE - rDS(ON) = 0.049 , VGS = 10V (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.056 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE a

 5.2. Size:617K  fairchild semi
 hufa76413dk8t f085.pdf

October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET process. This advanced pro- Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- Powertr

 6.1. Size:194K  fairchild semi
 hufa76419d3s.pdf

HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER

 6.2. Size:213K  fairchild semi
 hufa76419p3 hufa76419s3s hufa76419s3st.pdf

HUFA76419P3, HUFA76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 6.3. Size:197K  fairchild semi
 hufa76419d3-s hufa76419d f085.pdf

HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER

 6.4. Size:196K  fairchild semi
 hufa76419d3.pdf

HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER