HUFA76413P3 Todos los transistores

 

HUFA76413P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA76413P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 172 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de HUFA76413P3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HUFA76413P3 Datasheet (PDF)

 ..1. Size:206K  fairchild semi
 hufa76413p3.pdf pdf_icon

HUFA76413P3

HUFA76413P3Data Sheet December 200122A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeaturesSOURCE Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.049, VGS = 10VGATE- rDS(ON) = 0.056, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice and SABER Thermal

 5.1. Size:204K  fairchild semi
 hufa76413d3 hufa76413d3s.pdf pdf_icon

HUFA76413P3

HUFA76413D3, HUFA76413D3SData Sheet December 200120A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN DRAINSOURCE- rDS(ON) = 0.049, VGS = 10V (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.056, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE a

 5.2. Size:617K  fairchild semi
 hufa76413dk8t f085.pdf pdf_icon

HUFA76413P3

October 2010HUFA76413DK8T_F085N-Channel Logic Level UltraFET Power MOSFET60V, 4.8A, 56mGeneral DescriptionThese N-Channel power MOSFETs are manufactured us-Applicationsing the innovative UltraFET process. This advanced pro- Motor and Load Controlcess technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor- Powertr

 6.1. Size:194K  fairchild semi
 hufa76419d3s.pdf pdf_icon

HUFA76413P3

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

MOSTRAR MÁS

Otros transistores... HUFA76407D3 , HUFA76407D3S , HUFA76407D3ST , HUFA76407P3 , HUFA76409D3 , HUFA76409P3 , HUFA76413D3 , HUFA76413D3S , IRF4905 , HUFA76419D3 , HUFA76419P3 , HUFA76419S3S , HUFA76419S3ST , HUFA76423D3S , HUFA76423D3ST , HUFA76423P3 , HUFA76423S3S .

History: APM9428K | 2SK2579 | BSC070N10LS5 | AP2309GN-HF | BUK6213-30A | DMN3730UFB4 | 2SJ194

 

 
Back to Top

 


 
.