HUFA76419P3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76419P3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 29 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO-220AB

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HUFA76419P3 datasheet

 ..1. Size:213K  fairchild semi
 hufa76419p3 hufa76419s3s hufa76419s3st.pdf pdf_icon

HUFA76419P3

HUFA76419P3, HUFA76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 5.1. Size:194K  fairchild semi
 hufa76419d3s.pdf pdf_icon

HUFA76419P3

HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER

 5.2. Size:197K  fairchild semi
 hufa76419d3-s hufa76419d f085.pdf pdf_icon

HUFA76419P3

HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER

 5.3. Size:196K  fairchild semi
 hufa76419d3.pdf pdf_icon

HUFA76419P3

HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER

MOSTRAR MÁS

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