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HUFA76429D3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA76429D3S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 134 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO-252AA
     - Selección de transistores por parámetros

 

HUFA76429D3S Datasheet (PDF)

 ..1. Size:144K  fairchild semi
 hufa76429d3s hufa76429d3st.pdf pdf_icon

HUFA76429D3S

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 0.1. Size:372K  onsemi
 hufa76429d3st-f085.pdf pdf_icon

HUFA76429D3S

HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Impedance ModelsSOURCE- ww

 3.1. Size:229K  fairchild semi
 hufa76429d3.pdf pdf_icon

HUFA76429D3S

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 3.2. Size:638K  onsemi
 hufa76429d3.pdf pdf_icon

HUFA76429D3S

HUFA76429D3Data Sheet October 2013N-Channel Logic Level UltraFET Power MOSFET60 V, 20 A, 27 mPackagingFeaturesJEDEC TO-251AA Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 10VSOURCE- rDS(ON) = 0.027, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectriecal ModelsDRAIN - Spice and SABER Thermal Impedance Models

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TPC8051-H | ET6309 | AP2761P-A | AP2312GN | IRF8852 | 2SK1493 | IXTP76N25T

 

 
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