HUFA76439P3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76439P3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 155 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 300 nS

Cossⓘ - Capacitancia de salida: 840 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO-220AB

  📄📄 Copiar 

 Búsqueda de reemplazo de HUFA76439P3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HUFA76439P3 datasheet

 ..1. Size:290K  fairchild semi
 hufa76439p3 hufa76439s3s hufa76439s3st.pdf pdf_icon

HUFA76439P3

HUFA76439P3, HUFA76439S3S Data Sheet July 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Mo

 6.1. Size:214K  fairchild semi
 hufa76437p3 hufa76437s3s hufa76437s3st.pdf pdf_icon

HUFA76439P3

HUFA76437P3, HUFA76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE

 6.2. Size:215K  fairchild semi
 hufa76432p3.pdf pdf_icon

HUFA76439P3

HUFA76432P3, HUFA76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Ele

 6.3. Size:215K  fairchild semi
 hufa76432s3s hufa76432s3st.pdf pdf_icon

HUFA76439P3

HUFA76432P3, HUFA76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Ele

MOSTRAR MÁS

Otros transistores... HUFA76429S3S, HUFA76429S3ST, HUFA76432P3, HUFA76432S3S, HUFA76432S3ST, HUFA76437P3, HUFA76437S3S, HUFA76437S3ST, IRFP450, HUFA76439S3S, HUFA76439S3ST, HUFA76443P3, HUFA76443S3S, HUFA76445P3, HUFA76445S3S, HUFA76445S3ST, HUFA76609D3