HUFA76443S3S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUFA76443S3S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 260 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 235 nS
Cossⓘ - Capacitancia de salida: 1185 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: TO-263AB
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HUFA76443S3S datasheet
..1. Size:210K fairchild semi
hufa76443p3 hufa76443s3s.pdf 
HUF76443P3, HUF76443S3S Data Sheet December 2001 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.008 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.0095 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE E
6.1. Size:210K fairchild semi
hufa76445p3 hufa76445s3s hufa76445s3st.pdf
HUFA76445P3, HUFA76445S3S Data Sheet January 2002 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.0065 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.0075 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE
7.1. Size:206K fairchild semi
hufa76409p3.pdf
HUFA76409P3 Data Sheet December 2001 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.062 , VGS = 10V GATE - rDS(ON) = 0.070 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance
7.2. Size:194K fairchild semi
hufa76419d3s.pdf
HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER
7.3. Size:240K fairchild semi
hufa76423p3 hufa76423s3s hufa76423s3st.pdf
HUFA76423P3, HUFA76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.030 , VGS = 10V GATE - rDS(ON) = 0.035 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Ele
7.4. Size:839K fairchild semi
hufa76409d3st.pdf
HUFA76409D3, HUFA76409D3ST Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER
7.5. Size:150K fairchild semi
hufa76407d3st hufa76407d3 hufa76407d3s.pdf
HUFA76407D3, HUFA76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE SOURCE Simulation Models - Temperature Compensated PSPICE a
7.6. Size:213K fairchild semi
hufa76419p3 hufa76419s3s hufa76419s3st.pdf
HUFA76419P3, HUFA76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El
7.7. Size:543K fairchild semi
hufa76407dk8t f085.pdf
HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging JEDEC MS-012AA Ultra Low On-Resistance - rDS(ON) = 0.090 , VGS = 10V BRANDING DASH - rDS(ON) = 0.105 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models - SPICE and SABER Thermal Impedance
7.8. Size:290K fairchild semi
hufa76439p3 hufa76439s3s hufa76439s3st.pdf
HUFA76439P3, HUFA76439S3S Data Sheet July 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Mo
7.9. Size:204K fairchild semi
hufa76413d3 hufa76413d3s.pdf
HUFA76413D3, HUFA76413D3S Data Sheet December 2001 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN DRAIN SOURCE - rDS(ON) = 0.049 , VGS = 10V (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.056 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE a
7.10. Size:214K fairchild semi
hufa76437p3 hufa76437s3s hufa76437s3st.pdf
HUFA76437P3, HUFA76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE
7.11. Size:197K fairchild semi
hufa76419d3-s hufa76419d f085.pdf
HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER
7.12. Size:208K fairchild semi
hufa76407p3.pdf
HUFA76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.092 , VGS = 10V GATE - rDS(ON) = 0.107 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance M
7.13. Size:229K fairchild semi
hufa76429d3.pdf
HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El
7.14. Size:617K fairchild semi
hufa76413dk8t f085.pdf
October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET process. This advanced pro- Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- Powertr
7.15. Size:215K fairchild semi
hufa76432p3.pdf
HUFA76432P3, HUFA76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Ele
7.16. Size:202K fairchild semi
hufa76409d3.pdf
HUFA76409D3, HUFA76409D3ST Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER
7.17. Size:215K fairchild semi
hufa76432s3s hufa76432s3st.pdf
HUFA76432P3, HUFA76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Ele
7.18. Size:206K fairchild semi
hufa76429p3 hufa76429s3s hufa76429s3st.pdf
HUFA76429P3, HUFA76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.022 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE E
7.19. Size:199K fairchild semi
hufa76423d3s hufa76423d3st.pdf
HUFA76423D3, HUFA76423D3S Data Sheet December 2001 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.032 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.037 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER
7.20. Size:196K fairchild semi
hufa76419d3.pdf
HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER
7.21. Size:144K fairchild semi
hufa76429d3s hufa76429d3st.pdf
HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El
7.22. Size:263K fairchild semi
hufa76407dk8t.pdf
HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090 , VGS = 10V - rDS(ON) = 0.105 , VGS = 5V Simulation Models 5 - Temperature Compensated PSPICE and SABER Electrical Models 1 2 - SPICE and SABER Thermal Impedan
7.23. Size:206K fairchild semi
hufa76413p3.pdf
HUFA76413P3 Data Sheet December 2001 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features SOURCE Ultra Low On-Resistance DRAIN - rDS(ON) = 0.049 , VGS = 10V GATE - rDS(ON) = 0.056 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice and SABER Thermal
7.24. Size:638K onsemi
hufa76429d3.pdf
HUFA76429D3 Data Sheet October 2013 N-Channel Logic Level UltraFET Power MOSFET 60 V, 20 A, 27 m Packaging Features JEDEC TO-251AA Ultra Low On-Resistance - rDS(ON) = 0.023 , VGS = 10V SOURCE - rDS(ON) = 0.027 , VGS = 5V DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models DRAIN - Spice and SABER Thermal Impedance Models
7.25. Size:372K onsemi
hufa76429d3st-f085.pdf
HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023 , VGS = 10V - rDS(ON) = 0.027 , VGS = 5V DRAIN (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models GATE - Spice and SABER Thermal Impedance Models SOURCE - ww
Otros transistores... HUFA76432S3ST, HUFA76437P3, HUFA76437S3S, HUFA76437S3ST, HUFA76439P3, HUFA76439S3S, HUFA76439S3ST, HUFA76443P3, 4N60, HUFA76445P3, HUFA76445S3S, HUFA76445S3ST, HUFA76609D3, HUFA76609D3S, HUFA76609D3ST, HUFA76619D3, HUFA76619D3S
