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IXTP8N50MA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP8N50MA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220

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IXTP8N50MA Datasheet (PDF)

 6.1. Size:106K  ixys
ixtp8n50pm.pdf

IXTP8N50MA
IXTP8N50MA

Preliminary Technical InformationIXTP 8N50PM VDSS = 500 VPolarHVTMID25 = 4 APower MOSFET RDS(on) 0.8 (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220(IXTP...M) OUTLINEVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS

 6.2. Size:229K  ixys
ixta8n50p ixtp8n50p.pdf

IXTP8N50MA
IXTP8N50MA

IXTA 8N50P VDSS = 500 VPolarHVTMIXTP 8N50P ID25 = 8 APower MOSFET RDS(on) 0.8 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25 C8 AIDM

 8.1. Size:238K  ixys
ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf

IXTP8N50MA
IXTP8N50MA

Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

 8.2. Size:116K  ixys
ixtp8n65x2m.pdf

IXTP8N50MA
IXTP8N50MA

Advance Technical InformationX2-Class VDSS = 650VIXTP8N65X2MPower MOSFET ID25 = 4A RDS(on) 550m (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGDSVGSS Continuous 30 VVGSM Transient 40 V

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