HUFA76629D3 Todos los transistores

 

HUFA76629D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA76629D3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 114 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: TO-251AA
 

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HUFA76629D3 Datasheet (PDF)

 ..1. Size:202K  fairchild semi
 hufa76629d3 hufa76629d3st.pdf pdf_icon

HUFA76629D3

HUFA76629D3, HUFA76629D3SData Sheet January 200220A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINSOURCE (FLANGE) - rDS(ON) = 0.052, VGS = 10VDRAIN- rDS(ON) = 0.054, VGS = 5VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Elect

 7.1. Size:217K  fairchild semi
 hufa76639p3 hufa76639s3s hufa76639s3st.pdf pdf_icon

HUFA76629D3

HUFA76639P3, HUFA76639S3SData Sheet January 200250A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 7.2. Size:217K  fairchild semi
 hufa76645p3 hufa76645s3s hufa76645s3st.pdf pdf_icon

HUFA76629D3

HUFA76645P3, HUFA76645S3SData Sheet January 200275A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.015, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER Electrical

 7.3. Size:302K  fairchild semi
 hufa76645s3st f085.pdf pdf_icon

HUFA76629D3

HUFA76645S3ST_F085Data Sheet September 201075A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeatures Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10V- rDS(ON) = 0.015, VGS = 5VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABER Electrical ModelsGATE- Spice and SABER Thermal Imped

MOSTRAR MÁS

Otros transistores... HUFA76445S3S , HUFA76445S3ST , HUFA76609D3 , HUFA76609D3S , HUFA76609D3ST , HUFA76619D3 , HUFA76619D3S , HUFA76619D3ST , 2N60 , HUFA76629D3ST , HUFA76633P3 , HUFA76633S3S , HUFA76633S3ST , HUFA76639P3 , HUFA76639S3S , HUFA76639S3ST , HUFA76645P3 .

History: IXFN60N80P | STN3N40K3 | WM06N03FB

 

 
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