PMBFJ176 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMBFJ176
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.035 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm
Paquete / Cubierta: SOT23
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PMBFJ176 Datasheet (PDF)
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
pmbfj174 pmbf175 pmbf176 pmbf177.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
Otros transistores... PJX8803 , PJX8804 , PJX8805 , PJX8806 , PJZ6NA90 , PJZ9NA90 , PMBFJ174 , PMBFJ175 , EMB04N03H , PMBFJ177 , PMBFJ620 , PMC85XP , PMCM4401VNE , PMCM4401VPE , PMCM440VNE , PMCM6501VPE , PMCM650VNE .
History: SWF8N60D | HY030N06C2 | IRFI064 | SML10L100 | TPC8A06-H | SML10S75XX | WSD4038DN
History: SWF8N60D | HY030N06C2 | IRFI064 | SML10L100 | TPC8A06-H | SML10S75XX | WSD4038DN



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