PMBFJ620 Todos los transistores

 

PMBFJ620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMBFJ620
   Código: A8*
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.19 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 0.06 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: SOT363

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PMBFJ620 Datasheet (PDF)

 ..1. Size:67K  philips
pmbfj620.pdf

PMBFJ620
PMBFJ620

PMBFJ620Dual N-channel field-effect transistorRev. 01 11 May 2004 Product data sheet1. Product profile1.1 General descriptionTwo N-channel symmetrical junction field-effect transistors in a SOT363 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2 Features Two field effect tran

 ..2. Size:223K  nxp
pmbfj620.pdf

PMBFJ620
PMBFJ620

PMBFJ620Dual N-channel field-effect transistorRev. 3 6 March 2014 Product data sheet1. Product profile1.1 General descriptionTwo N-channel symmetrical junction field-effect transistors in a SOT363 package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.Such precautions are described in the A

 9.1. Size:32K  philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

 9.2. Size:98K  philips
pmbfj308.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE

 9.3. Size:100K  philips
pmbfj210 pmbfj211 pmbfj212 1.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr

 9.4. Size:47K  philips
pmbfj111 pmbfj112 pmbfj113.pdf

PMBFJ620
PMBFJ620

PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 9.5. Size:31K  philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

 9.6. Size:32K  philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

 9.7. Size:228K  philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 9.8. Size:68K  philips
pmbfj308 pmbfj309 pmbfj310 2.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE

 9.9. Size:46K  philips
pmbfj108 pmbfj109 pmbfj110.pdf

PMBFJ620
PMBFJ620

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 9.10. Size:57K  nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf

PMBFJ620
PMBFJ620

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

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