PMBFJ620 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMBFJ620
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.19 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 0.06 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Encapsulados: SOT363
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PMBFJ620 datasheet
..1. Size:67K philips
pmbfj620.pdf 
PMBFJ620 Dual N-channel field-effect transistor Rev. 01 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features Two field effect tran
..2. Size:223K nxp
pmbfj620.pdf
PMBFJ620 Dual N-channel field-effect transistor Rev. 3 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the A
9.1. Size:32K philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low
9.2. Size:98K philips
pmbfj308.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 Low noise PIN SYMBOL DE
9.3. Size:100K philips
pmbfj210 pmbfj211 pmbfj212 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr
9.4. Size:47K philips
pmbfj111 pmbfj112 pmbfj113.pdf
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
9.5. Size:31K philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int
9.6. Size:32K philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate volt
9.7. Size:228K philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
9.8. Size:68K philips
pmbfj308 pmbfj309 pmbfj310 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 Low noise PIN SYMBOL DE
9.9. Size:46K philips
pmbfj108 pmbfj109 pmbfj110.pdf
PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
9.10. Size:57K nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
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