WFF2N65B Todos los transistores

 

WFF2N65B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WFF2N65B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-220F
 

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WFF2N65B Datasheet (PDF)

 ..1. Size:537K  winsemi
 wff2n65b.pdf pdf_icon

WFF2N65B

WFF2N65BWFF2N65BWFF2N65BWFF2N65BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,650V(Type),R (Max 5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)Gener

 7.1. Size:214K  winsemi
 wff2n65l.pdf pdf_icon

WFF2N65B

WFF2N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD2.0A,650V,R (Max5.0)@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced

 7.2. Size:785K  winsemi
 wff2n65.pdf pdf_icon

WFF2N65B

WFF2N65WFF2N65WFF2N65WFF2N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,650V(Type),R (Max 5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150) Halog

 8.1. Size:613K  winsemi
 wff2n60b.pdf pdf_icon

WFF2N65B

WFF2N60BWFF2N60BWFF2N60BWFF2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V,R (Max 5.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

MOSTRAR MÁS

Otros transistores... PMBFJ620 , PMC85XP , PMCM4401VNE , PMCM4401VPE , PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 , BS170 , WFF4N60 , WFF5N60 , WFF5N60B , WFF5N60C , WFF5N65B , WFF5N80 , WFF630 , WFF634 .

History: FIR5N65FG | KW306 | QM3014S | AM90N02-04D | AP01L60T-H-HF | PHD101NQ03LT | AP4034GM-HF

 

 
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