WFF5N60C Todos los transistores

 

WFF5N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WFF5N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220F
 

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WFF5N60C Datasheet (PDF)

 ..1. Size:521K  winsemi
 wff5n60c.pdf pdf_icon

WFF5N60C

WFF5N60CWFF5N60CWFF5N60CWFF5N60CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 7.1. Size:522K  winsemi
 wff5n60b.pdf pdf_icon

WFF5N60C

WFF5N60BWFF5N60BWFF5N60BWFF5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 7.2. Size:519K  winsemi
 wff5n60.pdf pdf_icon

WFF5N60C

WFF5N60WFF5N60WFF5N60WFF5N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 4.5A,600V,RDS(on)(Max 2.2)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral

 8.1. Size:215K  winsemi
 wff5n65l.pdf pdf_icon

WFF5N60C

WFF5N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD5A,650V,R (Max2.7)@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced us

MOSTRAR MÁS

Otros transistores... PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 , WFF2N65B , WFF4N60 , WFF5N60 , WFF5N60B , IRF840 , WFF5N65B , WFF5N80 , WFF630 , WFF634 , WFF640 , WFF730 , WFF740 , WFF7N60 .

History: HGP068N15S | ELM17408GA

 

 
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