WFF5N60C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFF5N60C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

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WFF5N60C datasheet

 ..1. Size:521K  winsemi
 wff5n60c.pdf pdf_icon

WFF5N60C

WFF5N60C WFF5N60C WFF5N60C WFF5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 7.1. Size:522K  winsemi
 wff5n60b.pdf pdf_icon

WFF5N60C

WFF5N60B WFF5N60B WFF5N60B WFF5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 7.2. Size:519K  winsemi
 wff5n60.pdf pdf_icon

WFF5N60C

WFF5N60 WFF5N60 WFF5N60 WFF5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 4.5A,600V,RDS(on)(Max 2.2 )@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General

 8.1. Size:215K  winsemi
 wff5n65l.pdf pdf_icon

WFF5N60C

WFF5N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 5A,650V,R (Max2.7 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced us

MOSTRAR MÁS

Otros transistores... PMCM440VNE, PMCM6501VPE, PMCM650VNE, WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, IRF840, WFF5N65B, WFF5N80, WFF630, WFF634, WFF640, WFF730, WFF740, WFF7N60