WFF5N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFF5N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

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WFF5N80 datasheet

 ..1. Size:530K  winsemi
 wff5n80.pdf pdf_icon

WFF5N80

WFF5N80 WFF5N80 WFF5N80 WFF5N80 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,800V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi

 9.1. Size:521K  winsemi
 wff5n60c.pdf pdf_icon

WFF5N80

WFF5N60C WFF5N60C WFF5N60C WFF5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 9.2. Size:522K  winsemi
 wff5n60b.pdf pdf_icon

WFF5N80

WFF5N60B WFF5N60B WFF5N60B WFF5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 9.3. Size:519K  winsemi
 wff5n60.pdf pdf_icon

WFF5N80

WFF5N60 WFF5N60 WFF5N60 WFF5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 4.5A,600V,RDS(on)(Max 2.2 )@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General

MOSTRAR MÁS

Otros transistores... PMCM650VNE, WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, IRF540N, WFF630, WFF634, WFF640, WFF730, WFF740, WFF7N60, WFF7N65S, WFF830