WFF5N80 Todos los transistores

 

WFF5N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WFF5N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220F
 

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WFF5N80 Datasheet (PDF)

 ..1. Size:530K  winsemi
 wff5n80.pdf pdf_icon

WFF5N80

WFF5N80WFF5N80WFF5N80WFF5N80Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,800V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

 9.1. Size:521K  winsemi
 wff5n60c.pdf pdf_icon

WFF5N80

WFF5N60CWFF5N60CWFF5N60CWFF5N60CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 9.2. Size:522K  winsemi
 wff5n60b.pdf pdf_icon

WFF5N80

WFF5N60BWFF5N60BWFF5N60BWFF5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 9.3. Size:519K  winsemi
 wff5n60.pdf pdf_icon

WFF5N80

WFF5N60WFF5N60WFF5N60WFF5N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 4.5A,600V,RDS(on)(Max 2.2)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral

MOSTRAR MÁS

Otros transistores... PMCM650VNE , WFF2N65 , WFF2N65B , WFF4N60 , WFF5N60 , WFF5N60B , WFF5N60C , WFF5N65B , IRF540 , WFF630 , WFF634 , WFF640 , WFF730 , WFF740 , WFF7N60 , WFF7N65S , WFF830 .

History: RYM002N05 | PHP160NQ08T | SUM33N20-60P | IPD25CN10NG | 6N70KG-TF2-T | IRF5NJ540 | SVGQ109R5NAD

 

 
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