WFP5N50 Todos los transistores

 

WFP5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WFP5N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO-220
 

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WFP5N50 Datasheet (PDF)

 ..1. Size:762K  winsemi
 wfp5n50.pdf pdf_icon

WFP5N50

WFP5N50WFP5N50WFP5N50WFP5N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V,RDS(on)(Max1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MO SFET is pro du ced using Wi

 9.1. Size:519K  winsemi
 wfp5n80.pdf pdf_icon

WFP5N50

WFP5N80WFP5N80WFP5N80WFP5N80Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,800V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

 9.2. Size:527K  winsemi
 wfp5n60b.pdf pdf_icon

WFP5N50

WFP5N60BWFP5N60BWFP5N60BWFP5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 9.3. Size:485K  winsemi
 wfp5n60.pdf pdf_icon

WFP5N50

WFP5N60WFP5N60WFP5N60WFP5N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

MOSTRAR MÁS

Otros transistores... WFP18N50 , WFP2N60 , WFP2N60B , WFP3205 , WFP3205T , WFP4N60 , WFP50N06 , WFP50N06C , AON7410 , WFP5N60 , WFP5N60B , WFP5N80 , WFP630 , WFP634 , WFP640 , WFP650 , WFP70N06 .

History: IPD068N10N3 | STD7NM50N | AUIRFZ46NS | BL13N25L-D | HFP4N90 | APT6038SLLG | FMI12N50E

 

 
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