WFP5N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFP5N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220C

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WFP5N80 datasheet

 ..1. Size:519K  winsemi
 wfp5n80.pdf pdf_icon

WFP5N80

WFP5N80 WFP5N80 WFP5N80 WFP5N80 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,800V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi

 9.1. Size:762K  winsemi
 wfp5n50.pdf pdf_icon

WFP5N80

WFP5N50 WFP5N50 WFP5N50 WFP5N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5A,500V,RDS(on)(Max1.6 )@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MO SFET is pro du ced using Wi

 9.2. Size:527K  winsemi
 wfp5n60b.pdf pdf_icon

WFP5N80

WFP5N60B WFP5N60B WFP5N60B WFP5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 9.3. Size:485K  winsemi
 wfp5n60.pdf pdf_icon

WFP5N80

WFP5N60 WFP5N60 WFP5N60 WFP5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi

MOSTRAR MÁS

Otros transistores... WFP3205, WFP3205T, WFP4N60, WFP50N06, WFP50N06C, WFP5N50, WFP5N60, WFP5N60B, 13N50, WFP630, WFP634, WFP640, WFP650, WFP70N06, WFP70N06T, WFP730, WFP740