PMGD290UCEA Todos los transistores

 ..1. Size:357K  nxp
 pmgd290ucea.pdf

PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD prote

 7.1. Size:96K  philips
 pmgd290xn.pdf

PMGD290XN Dual N-channel TrenchMOS extremely low level FET Rev. 01 26 February 2004 Product data MBD128 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th

 7.2. Size:209K  nxp
 pmgd290xn.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.3. Size:1469K  cn vbsemi
 pmgd290xn.pdf

PMGD290XN www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested 20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBM a 0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv