JANSR2N7278 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JANSR2N7278

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: TO205AF

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JANSR2N7278 datasheet

 ..1. Size:45K  intersil
 jansr2n7278.pdf pdf_icon

JANSR2N7278

JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 4A, 250V, rDS(ON) = 0.700 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

 4.1. Size:45K  intersil
 jansr2n7275.pdf pdf_icon

JANSR2N7278

JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.500 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

 4.2. Size:45K  intersil
 jansr2n7272.pdf pdf_icon

JANSR2N7278

JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.180 The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

 5.1. Size:46K  intersil
 jansr2n7292.pdf pdf_icon

JANSR2N7278

JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P

MOSTRAR MÁS

Otros transistores... J110, J111, J112, J113, J211, J212, JANSR2N7272, JANSR2N7275, 2N7000, JANSR2N7292, JANSR2N7294, JANSR2N7395, JANSR2N7396, JANSR2N7398, JANSR2N7399, JANSR2N7400, JANSR2N7401